{"product_id":"micron-technology-dram-sdram-ddr2-part-mt47h32m16nf-25e-it-h-dynamic-random-access-memory-dex","title":"Micron Technology DRAM SDRAM-DDR3, Part #: MT47H32M16NF-25E IT:H | Dynamic random access memory | DEX","description":"\u003cp\u003eMicron Technology DRAM SDRAM-DDR2, Part #: MT47H32M16NF-25E IT:H features: • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I\/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Duplicate output strobe (RDQS) option for x8 • DLL to align DQ and DQS transitions with CK • 4 internal banks for concurrent operation • Programmable CAS latency (CL) • Posted CAS additive latency (AL) • WRITE latency = READ latency - 1 t CK • Selectable burst lengths: 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination (ODT) • Industrial temperature (IT) option • RoHS-compliant • Supports JEDEC clock jitter specification\u003c\/p\u003e\n\u003cp\u003e \u003c\/p\u003e\n\u003cp\u003eMIL:MT47H32M16NF-25E IT H\u003c\/p\u003e\n\u003cp\u003eMT47H32M16NF-25E IT:H\u003c\/p\u003e","brand":"MICRON TECHNOLOGY INC","offers":[{"title":"Default Title","offer_id":41871277752499,"sku":"MIL:MT47H32M16NF-25E IT H","price":6.54,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0403\/5012\/2152\/files\/micron-technology-dram-sdram-ddr3-part-mt47h32m16nf-25e-ith-dynamic-random-access-memory-dex-information-technology-micron-technology-inc-223198.jpg?v=1715401760","url":"https:\/\/store.dex.com\/en-apac\/products\/micron-technology-dram-sdram-ddr2-part-mt47h32m16nf-25e-it-h-dynamic-random-access-memory-dex","provider":"DEX","version":"1.0","type":"link"}