MICRON TECHNOLOGY INC
Micron Technology DRAM SDRAM-DDR4, Part #: MT40A4G8BAF-062E:B TR | Dynamic random access memory | DEX
Micron Technology DRAM SDRAM-DDR4, Part #: MT40A4G8BAF-062E:B TR | Dynamic random access memory | DEX
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7218745934003
Micron Technology DRAM SDRAM-DDR4, Part #: MT40A4G8BAF-062E:B TR | Dynamic random access memory | DEX
micron-technology-dram-sdram-ddr4-part-mt40a4g8baf-062e-b-tr-dynamic-random-access-memory-dex
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Micron Technology DRAM SDRAM-DDR4, Part #: MT40A4G8BAF-062E:B TR features: • Uses 16Gb Micron die • Two ranks (includes dual CS#, ODT, and CKE balls) • Each rank has 4 groups of 4 internal banks for concurrent operation • VDD = VDDQ = 1.2V (1.14–1.26V) • 1.2V VDDQ-terminated I/O • JEDEC-standard ball-out • Low-profile package • TC of 0°C to 95°C – 0°C to 85°C: 8192 refresh cycles in 64ms – 85°C to 95°C: 8192 refresh cycles in 32ms
MIL:MT40A4G8BAF-062E B TR
MT40A4G8BAF-062E:B TR
