MACRONIX
Macronix IC Flash 8MBIT Part #MX25V8035FM1R03 | IC
Macronix IC Flash 8MBIT Part #MX25V8035FM1R03 | IC
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MX25V8035F is 8Mb bits Serial NOR Flash memory, which is configured as 1,048,576 x 8 internally. When it is in four I/O mode, the structure becomes 2,097,152 bits x 4 or 4,194,304 bits x 2. MX25V8035F features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input. When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# pin and HOLD# pin become SIO0 pin, SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output. The MX25V8035F MXSMIO (Serial Multi I/O) provides sequential read operation on the whole chip. After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256 bytes) basis, or word basis. Erase command is executed on 4K-byte sector, 32K-byte block, or 64K-byte block, or whole chip basis.
Features:
- Supports Serial Peripheral Interface Mode 0 and Mode 3
- 8,388,608 x 1 bit structure or 4,194,304 x 2 bits (two I/O mode) structure or 2,097,152 x 4 bits (four I/O mode) structure
- Equal Sectors with 4K byte each, or Equal Blocks with 32K/64K byte each
- Any Block can be erased individually
- Single Power Supply Operation
- Operation Voltage: 2.3V-3.6V for Read, Erase and Program Operations
- Latch-up protected to 100mA from -1V to Vcc +1V
- High Performance
- Fast read
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 104MHz with 4 dummy cycles, equivalent to 208MHz
- 4 I/O: 104MHz with 2+4 dummy cycles, equivalent to 416MHz
- Fast program and erase time
- 8/16/32/64 byte Wrap-Around Burst Read Mode
- Low Power Consumption
- Minimum 100,000 erase/program cycles
- 20 years data retention
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