Micron Technology DRAM , Part #MT47H128M16RT-25E AIT:C TR | Dynamic random access memory | DEX

Micron Technology DRAM SDRAM-DDR2, Part #MT47H128M16RT-25E AIT:C TR

Features

• Industrial and automotive temperature compliant
• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture • Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation • Programmable CAS latency (CL) • Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 32ms, 8192-cycle refresh
• On-die termination (ODT)
• RoHS-compliant
• Supports JEDEC clock jitter specification
• AEC-Q100
• PPAP submisson
• 8D response time

MIL:MT47H128M16RT-25E AIT:C TR

MT47H128M16RT-25E AIT:C TR