Micron Technology DRAM SDRAM-DDR4, Part #: MT48H32M16LFB4-6 IT:C TR | Dynamic random access memory | DEX

Micron Technology DRAM SDRAMMobile-, Part #: MT48H32M16LFB4-6 IT:C TR features: • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal, pipelined operation; column address can be changed every clock cycle • Four internal banks for concurrent operation • Programmable burst lengths: 1, 2, 4, 8, and continuous • Auto precharge, includes concurrent auto precharge • Auto refresh and self refresh modes • LVTTL-compatible inputs and outputs • On-chip temperature sensor to control self refresh rate • Partial-array self refresh (PASR) • Deep power-down (DPD) • Selectable output drive strength (DS) • 64ms refresh period; 32ms for automotive temperature

MIL:MT48H32M16LFB4-6 IT C TR

MT48H32M16LFB4-6 IT:C TR