Micron Technology DRAM SDRAMMobile-, Part #: MT41K1G8RKB-107:P | Dynamic random access memory | DEX

Micron Technology DRAM SDRAM-DDR3L, Part #: MT41K1G8RKB-107:P features: • Uses 4Gb Micron die • Two ranks (includes dual CS#, ODT, CKE, and ZQ balls) • Each rank has eight internal banks for concurrent operation • VDD = VDDQ = 1.35V (1.283–1.45V); backward compatible to VDD = VDDQ = 1.5V ±0.075V • 1.35V center-terminated push/pull I/O • JEDEC-standard ball-out • Low-profile package • TC of 0°C to 95°C – 0°C to 85°C: 8192 refresh cycles in 64ms – 85°C to 95°C: 8192 refresh cycles in 32ms – Industrial temperature (IT) available (Rev. E)

MIL:MT41K1G8RKB-107 P

MT41K1G8RKB-107:P