Micron Technology DRAM SDRAM-DDR4, Part #: MT42L32M32D1HE-18 AAT:D | Dynamic random access memory | DEX

Micron Technology DRAM SDRAMMobile-, Part #: MT42L32M32D1HE-18 AAT:D features: • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V – VDDCA/VDDQ = 1.14–1.30V – VDD1 = 1.70–1.95V • Clock frequency range – 533–10 MHz (data rate range: 1066–20 Mb/s/pin) • Four-bit prefetch DDR architecture • Eight internal banks for concurrent operation • Multiplexed, double data rate, command/address inputs; commands entered on every CK edge • Bidirectional/differential data strobe per byte of data (DQS/DQS#) • Programmable READ and WRITE latencies (RL/WL) • Programmable burst lengths: 4, 8, or 16 • Per-bank refresh for concurrent operation • On-chip temperature sensor to control self refresh rate • Partial-array self refresh (PASR) • Deep power-down mode (DPD) • Selectable output drive strength (DS) • Clock stop capability • RoHS-compliant, “green” packaging

MIL:MT42L32M32D1HE-18 AAT D

MT42L32M32D1HE-18 AAT:D