Micron Technology DRAM SDRAM-DDR2, Part #: MT40A1G16TB-062E:F TR | Dynamic random access memory | DEX

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G16TB-062E:F TR uses Micron’s 8Gb DDR4 SDRAM die; two x8s combined to make one x16. Similar signals as mono x16, there is one extra ZQ connection for faster ZQ Calibration and a BG1 control required for x8 addressing. Features:

• Uses two x8 8Gb Micron die to make one x16 • Single rank TwinDie • VDD = VDDQ = 1.2V (1.14–1.26V) • 1.2V VDDQ-terminated I/O • JEDEC-standard ball-out • Low-profile package • TC of 0°C to 95°C – 0°C to 85°C: 8192 refresh cycles in 64ms – 85°C to 95°C: 8192 refresh cycles in 32ms

MIL:MT40A1G16TB-062E F TR

MT40A1G16TB-062E:F TR