Diodes Incorporated N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, Part #: BSS123-7-F | DEX

Diodes Incorporated N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, Part #: BSS123-7-F | DEX features:  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  High Drain-Source Voltage Rating  Totally Lead-Free & Fully RoHS Compliant  Halogen and Antimony Free. “Green” Device 

Mechanical Data:
 Case: SOT23  Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208  Weight: 0.008 grams (Approximate)

DOI:BSS123-7-F 

BSS123-7-F