Intel Central Processing Unit part #: CN8063801194002S R1J1 | CPU | DEX

Intel Central Processing Unit part #: CN8063801194002S R1J1 Processor Feature Details:

• Four, two, or single execution cores (4C, 2C, or 1C respectively) • 32-KB data first-level cache (L1) for each core, parity protected • 32-KB instruction first-level cache (L1) for each core, ECC protected • 256-KB shared instruction/data second-level cache (L2) for each core, ECC protected • Up to 8-MB shared instruction/data third-level cache (L3) across all cores, ECC protected

System Memory Support

• One or two channels of DDR3/DDR3L memory with a maximum of two UDIMMs or two SO-DIMMs per channel • ECC Memory Down topology of up to eighteen x8 SDRAM devices per channel • Non-ECC Memory Down topology of up to eight x16 DDR3/DDR3L SDRAM devices per channel • Single- and dual-channel memory organization modes • Memory capacity supported from 512 MB up to 32 GB • Using 4-Gb device technologies, the largest total memory capacity possible is 32 GB, assuming Dual Channel Mode with four x8, double-sided, dual-ranked unbuffered DIMM memory configuration • 1-Gb, 2-Gb, and 4-Gb DDR3/DDR3L DRAM technologies are supported for x8 and x16 devices • Processor on-die Reference Voltage (VREF) generation for both DDR3 Read (RDVREF) and Write (VREFDQ) • Data burst length of eight for all memory organization modes • Memory DDR3/DDR3L data transfer rates of 1333 MT/s and 1600 MT/s. • 72-bit wide channels, 64-bit data + 8-bit ECC • 64-bit wide channels, without ECC option • System Memory Interface I/O Voltage of 1.35V and 1.5V • DDR3 and DDR3L DIMMs/DRAMs running at 1.5V • DDR3L DIMMs/DRAMs running at 1.35V • Supports memory configurations that mix DDR3 DIMMs/DRAMs with DDR3L DIMMs/DRAMs running at 1.5V • Supports ECC and non-ECC, unbuffered DDR3 DIMMs — Mixing of ECC and Non-ECC DIMMS is not supported • Theoretical maximum memory bandwidth of: — 21.3 GB/s in dual-channel mode assuming DDR3 1333 MT/s — 25.6 GB/s in dual-channel mode assuming DDR3 1600 MT/s • Up to 64 simultaneous open pages, 32 per channel (assuming 8 ranks of 8 bank devices) • Memory organizations: — Single-channel modes — Dual-channel modes - Intel® Flex Memory Technology: Dual-channel symmetric (Interleaved) • Command launch modes of 1n/2n • On-Die Termination (ODT) • Intel® Fast Memory Access (Intel® FMA): — Just-in-Time Command Scheduling — Command Overlap — Out-of-Order Scheduling

ITL:CN8063801194002S R1J1

CN8063801194002S R1J1