Micron Technology DRAM SDRAM-DDR4, Part #: MT41K1G4DA-107:P | Dynamic random access memory | DEX

Micron Technology DRAM , Part #: MT41K1G4DA-107:P features: • VDD = VDDQ = 1.35V (1.283–1.45V) • Backward compatible to VDD = VDDQ = 1.5V ±0.075V – Supports DDR3L devices to be backward compatible in 1.5V applications • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable posted CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of 105°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C – 16ms, 8192-cycle refresh at >95°C to 105°C • Self refresh temperature (SRT) • Automatic self refresh (ASR) • Write leveling • Multipurpose register • Output driver calibration

MIL:MT41K1G4DA-107 P

MT41K1G4DA-107:P