Micron Technology DRAM SDRAMMobile-, Part #: MT44K16M36RB-093F:B | Dynamic random access memory | DEX

Micron Technology DRAM , Part #: MT44K16M36RB-093F:B features: • 1066 MHz DDR operation (2133 Mb/s/ball data rate) • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency) • Organization – 32 Meg x 18, and 16 Meg x 36 common I/O (CIO) – 16 banks • 1.2V center-terminated push/pull I/O • 2.5V VEXT, 1.35V VDD, 1.2V VDDQ I/O • Reduced cycle time (t RC (MIN) = 7.5 - 12ns) • SDR addressing • Programmable READ/WRITE latency (RL/WL) and burst length • Data mask for WRITE commands • Differential input clocks (CK, CK#) • Free-running differential input data clocks (DKx, DKx#) and output data clocks (QKx, QKx#) • On-die DLL generates CK edge-aligned data and differential output data clock signals • 64ms refresh (128K refresh per 64ms) • 168-ball BGA package • Ω or 60Ω matched impedance outputs • Integrated on-die termination (ODT) • Single or multibank writes • Extended operating range (200–1066 MHz) • READ training register • Multiplexed and non-multiplexed addressing capabilities • Mirror function • Output driver and ODT calibration • JTAG interface (IEEE 1149.1-2001)

MIL:MT44K16M36RB-093F B

MT44K16M36RB-093F:B