Micron Technology DRAM SDRAMMobile-, Part #: MT44K32M36RB-107E:A | Dynamic random access memory | DEX

Micron Technology DRAM , Part #: MT44K32M36RB-107E:A features: • 1200 MHz DDR operation (2400 Mb/s/ball data rate) • 86.4Gb/s peak bandwidth (x36 at 1200 MHz clock frequency) • Organization – 64 Meg x 18, and 32 Meg x 36 common I/O (CIO) – 16 banks • 1.2V center-terminated push/pull I/O • 2.5V VEXT, 1.35V VDD, 1.2V VDDQ (optional 1.35V VDDQ for 2400 operation only). • Reduced cycle time (t RC (MIN) = 6.67 - 8ns) • SDR addressing • Programmable READ/WRITE latency (RL/WL) and burst length • Data mask for WRITE commands • Differential input clocks (CK, CK#) • Free-running differential input data clocks (DKx, DKx#) and output data clocks (QKx, QKx#) • On-die DLL generates CK edge-aligned data and differential output data clock signals • 64ms refresh (128K refresh per 64ms) • 168-ball BGA package • Ω or 60Ω matched impedance outputs • Integrated on-die termination (ODT) • Single or multibank writes • Extended operating range (200–1200 MHz) • READ training register • Multiplexed and non-multiplexed addressing capabilities • Mirror function • Output driver and ODT calibration • JTAG interface (IEEE 1149.1-2001)

MIL:MT44K32M36RB-107E A

MT44K32M36RB-107E:A