Micron Technology DRAM SDRAMMobile-, Part #: MT47H128M16RT-25E AIT:C | Dynamic random access memory | DEX

Micron Technology DRAM SDRAM-DDR2, Part #: MT47H128M16RT-25E AIT:C features: • Industrial and automotive temperature compliant • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Duplicate output strobe (RDQS) option for x8 • DLL to align DQ and DQS transitions with CK • 8 internal banks for concurrent operation • Programmable CAS latency (CL) • Posted CAS additive latency (AL) • WRITE latency = READ latency - 1 tCK • Programmable burst lengths (BL): 4 or 8 • Adjustable data-output drive strength • 32ms, 8192-cycle refresh • On-die termination (ODT) • RoHS-compliant • Supports JEDEC clock jitter specification • AEC-Q100 • PPAP submisson • 8D response time

MIL:MT47H128M16RT-25E AIT C

MT47H128M16RT-25E AIT:C