Micron Technology DRAM , Part #MT47H32M16NF-25E AAT:H TR | Dynamic random access memory | DEX

Micron Technology DRAM SDRAM-DDR2, Part #MT47H32M16NF-25E AAT:H TR

Features

• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 4 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 t CK
• Selectable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• RoHS-compliant
• Supports JEDEC clock jitter specification
• AEC-Q100
• PPAP submission
• 8D response time

MIL:MT47H32M16NF-25E AAT:H TR

MT47H32M16NF-25E AAT:H TR