Micron Technology DRAM SDRAM, Part #MT41K256M16TW-107 AUT:P TR | Dynamic random access memory | DEX

DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM.

Features

• VDD = VDDQ = 1.35V (1.283–1.45V)
• Backward compatible to VDD = VDDQ = 1.5V ±0.075V – Supports DDR3L devices to be backward compatible in 1.5V applications
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 105°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C – 16ms, 8192-cycle refresh at >95°C to 105°C
• Self refresh temperature (SRT)
• Automatic self refresh (ASR)
• Write leveling
• Multipurpose register
• Output driver calibration

MIL:MT41K256M16TW-107 AUT:P TR

MT41K256M16TW-107 AUT:P TR