Micron Technology DRAM SDRAM-DDR4, Part #MT40A1G16KNR-062E:E TR | Dynamic random access memory | DEX

The 16Gb (TwinDie) DDR4 SDRAM uses Micron’s 8Gb DDR4 SDRAM die; two x8s combined to make one x16. Similar signals as mono x16, there is one extra ZQ connection for faster ZQ Calibration and a BG1 control required for x8 addressing. 

Features

• Uses two x8 8Gb Micron die to make one x16
• Single rank TwinDie
• VDD = VDDQ = 1.2V (1.14–1.26V)
• 1.2V VDDQ-terminated I/O
• JEDEC-standard ball-out
• Low-profile package
• TC of 0°C to 95°C – 0°C to 85°C: 8192 refresh cycles in 64ms – 85°C to 95°C: 8192 refresh cycles in 32ms

MIL:MT40A1G16KNR-062E:E TR

MT40A1G16KNR-062E:E TR