Micron Technology DRAM SDRAMMobile-, Part #: MT46H16M32LFBQ-5 AAT:C | Dynamic random access memory | DEX

Micron Technology DRAM SDRAMMobile-, Part #: MT46H16M32LFBQ-5 AAT:C features: • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; center aligned with data for WRITEs • 4 internal banks for concurrent operation • Data masks (DM) for masking write data; one mask per byte • Programmable burst lengths (BL): 2, 4, 8, or 16 • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.8V LVCMOS-compatible inputs • Temperature-compensated self refresh (TCSR) • Partial-array self refresh (PASR) • Deep power-down (DPD) • Status read register (SRR) • Selectable output drive strength (DS) • Clock stop capability • 64ms refresh, 32ms for automotive temperature

MIL:MT46H16M32LFBQ-5 AAT C

MT46H16M32LFBQ-5 AAT:C