Visual Part #SQJ479EP-T1_GE3 | DEX

Visual Part #SQJ479EP-T1_GE3

The SQJ479EP-T1_GE3 is a P-channel MOSFET manufactured by Vishay Semiconductors. Let’s explore its key specifications:

• Technology: Si
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK-SO-8-4
• Transistor Polarity: P-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 80 V
• Id - Continuous Drain Current: 32 A
• Rds On - Drain-Source Resistance: 33 mΩ
• Vgs - Gate-Source Voltage: -20 V to +20 V
• Vgs th - Gate-Source Threshold Voltage: 2.5 V
• Qg - Gate Charge: 90 nC
• Minimum Operating Temperature: -55°C
• Maximum Operating Temperature: +175°C
• Pd - Power Dissipation: 68 W
• Channel Mode: Enhancement
• Qualification: AEC-Q101
• Tradename: TrenchFET
• Series: SQ
• Packaging: Reel, Cut Tape, MouseReel